AURION Vacuum chamber CYLOS 160/RIE
63500-D Seligenstadt
14 Am Sandborn
+49 6182 96280
+1 6182 962816
AURION Vacuum chamber CYLOS 160/RIE
Anfrage an Anbieter senden
For this process usually a planar plate reactor is used (see figure 1). After generating a gas atmosphere with a pressure of 10-2 to 10-1 mbar the gas discharge (plasma) is ignited by applying an RF voltage. Caused by the different mobility of light electrons and heavy ions in the electric field, a negative DC potential builds up at the smaller electrode (substrate carrier). This self bias potential usually is about 10 to a few hundred volts.
The etching effect to the substrate (wafer, PCB etc.) is the sum of at least two processes, a physical and a chemical one:
- Chemical etching / removal of the substrate surface or contami-nation by reaction with reactive gas particles generated in the plasma (plasma etching).
- Physical etching of the surface by transfer of direct momentum of heavy ions which are accelerated in the electric field (sputter etching)
Gas inlet system : up to 4 mass flow controllers
Vacuum chamber : stainless steel or aluminum
AURION Vacuum chamber CYLOS 160/RIE
